For xrd, ellipsometry examinations, single-side-polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double-side-polished si ( lll ) wafers were used and for ultraviolet-visible spectrophotometry, double-side-polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used . the cu-mgf2 cermet films were from 50 to 600nm thick 用于xrd分析、橢偏測量的單拋si(111)晶片和電阻測試的載玻片上淀積膜厚約為600nm;用于ir測試的雙拋si(111)晶片和uv測試的石英玻璃片上淀積膜厚約為250nm;用于透射電鏡分析的樣品則淀積在400目銅網(wǎng)上的支撐formvar膜上,膜厚約為50100nm。